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  may-17-2004 1 bcr179.../semb4 pnp silicon digital transistor ? switching circuit, inverter, interface circuit, driver circuit. ? built in bias resistor ( r 1 = 10k ? ) ? for 6-pin packages: two (galvanic) internal isolated transistors with good matching in one package bcr179f/l3 bcr179t semb4 eha07180 3 12 be c 1 r eha07266 6 54 3 2 1 c1 b2 e2 c2 b1 e1 tr1 tr2 r 1 r 1 type marking pin configuration package bcr179f BCR179L3 bcr179t semb4 wws ww wws ww 1=b 1=b 1=b 1=e1 2=e 2=e 2=e 2=b1 3=c 3=c 3=c 3=c2 - - - 4=e2 - - - 5=b2 - - - 6=c1 tsfp-3 tslp-3-4 sc75 sot666
may-17-2004 2 bcr179.../semb4 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 50 v collector-base voltage v cbo 50 emitter-base voltage v ebo 5 input on voltage v i(on) 20 collector current i c 100 ma total power dissipation bcr179f, t s 128c BCR179L3, t s 135c bcr179t, t s 109c semb4, t s 75c p tot 250 250 250 250 mw junction temperature t j 150 c storage temperature t stg 150 ... -65 thermal resistance parameter symbol value unit junction - soldering point 1) bcr179f BCR179L3 bcr179t semb4 r thjs 90 60 109 300 k/w 1 for calculation of r thja please refer to application note thermal resistance
may-17-2004 3 bcr179.../semb4 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 100 a, i b = 0 v (br)ceo 50 - - v collector-base breakdown voltage i c = 10 a, i e = 0 v (br)cbo 50 - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 5 - - collector-base cutoff current v cb = 40 v, i e = 0 i cbo - - 100 na dc current gain 1) i c = 5 ma, v ce = 5 v h fe 120 - 630 - collector-emitter saturation voltage 1) i c = 10 ma, i b = 0,5 ma v cesat - - 0,3 v input off voltage i c = 100 c, v ce = 5 v v i(off) 0,4 - 1 input on voltage i c = 2 ma, v ce = 0,3 v v i(on) 0,5 - 1,1 input resistor r 1 7 10 13 k ? ac characteristics transition frequency i c = 10 ma, v ce = 5 v, f = 100 mhz f t - 150 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 1,2 - pf 1 pulse test: t < 300s; d < 2%
may-17-2004 4 bcr179.../semb4 dc current gain h fe = ? ( i c ) v ce = 5 v (common emitter configuration) 10 -4 10 -3 10 -2 10 -1 a i c 1 10 2 10 3 10 h fe collector-emitter saturation voltage v cesat = ? ( i c ), h fe = 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v 1 v cesat -4 10 -3 10 -2 10 -1 10 a i c input on voltage v i (on) = ? ( i c ) v ce = 0.3v (common emitter configuration) 10 -1 10 0 10 1 10 2 v v i(on) -4 10 -3 10 -2 10 -1 10 a i c input off voltage v i(off) = ? ( i c ) v ce = 5v (common emitter configuration) 0 0.5 1 v 2 v i(off) -6 10 -5 10 -4 10 -3 10 -2 10 a i c
may-17-2004 5 bcr179.../semb4 total power dissipation p tot = ? ( t s ) bcr179f 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot total power dissipation p tot = ? ( t s ) BCR179L3 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot total power dissipation p tot = ? ( t s ) bcr179t 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot total power dissipation p tot = ? ( t s ) semb4 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot
may-17-2004 6 bcr179.../semb4 permissible pulse load p totmax / p totdc = ? ( t p ) bcr179f 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 p totmax / p totdc d=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 permissible puls load r thjs = ? ( t p ) bcr179f 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 k/w r thjs d=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 permissible puls load r thjs = ? ( t p ) BCR179L3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = ? ( t p ) BCR179L3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
may-17-2004 7 bcr179.../semb4 permissible puls load r thjs = ? ( t p ) bcr179t 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs d=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 permissible pulse load p totmax / p totdc = ? ( t p ) bcr179t 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 p totmax / p totdc d=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 permissible puls load r thjs = ? ( t p ) semb4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = ? ( t p ) semb4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
published by infineon technologies ag, st.-martin-strasse 53, 81669 mnchen ? infineon technologies ag 200 4 . all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office (www.infineon.com). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.


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